应用于低失能近轴背散射电子的扩展Everhart理论

应用于低失能近轴背散射电子的扩展Everhart理论 Extended Everhart Theory Applying to Low Loss Energy and Coaxial Backscattered Electrons in SEM 蒋昌忠 JIANG Chang zhong 1 first-author 武汉大学物理科学与技术学院,湖北,武汉,430072 武汉大学物理科学与技术学院,湖北,武汉,430072 School of Physics and Technology, Wuhan University School of Physics and Technology, Wuhan University 将得到广泛应用的Everhart理论加以扩展以使其能包含利用低失能近轴背散射电子的扫描电子显微镜的 3个可调参量 :入射电子能量、能量损失窗口和探测角 .这一扩展不仅丰富了Everhart理论体系 ,同时使得能用解析的方法定性地描述上述 3个参量对高能同轴背散射电子背散射率的影响 .和蒙特卡罗模拟结果的对比表明 ,扩展Everhart理论更适合于解释薄样品中的同轴背散射电子 . The Everhart theory, applied widely to practice, is extended. This extended expression includes the three parameters （the primary energy, energy loss windows and detection angle） of the scanning electron microscope using low loss energy and coaxial backscattered electrons. This extension not only enriches the Everhart theory system, but also makes possible to show the influence of the three parameters on the backscattering coefficient. The comparison, between the extended theory results and the Monte Carlo simulation results, shows that the extended theory is more suitable to estimate the backscattering coefficient of the thin film target than the solid target. 扫描电子显微镜 同轴背散射电子 Everhart理论 蒙特卡罗模拟 scanning electron microscope （SEM） backscattered electron （BSE） Everhart theory Monte Carlo simulation TN16 国家自然科学基金!（1 0 0 4 50 0 1;1 0 0 0 50 0 5）;教育部骨干教师基金;武汉大学邵逸周研究基金资助项目 2001-01-01 2021-04-01 1