P⁺的NMA离子注入方法制备多晶硅太阳电池的研究

P + 的NMA离子注入方法制备多晶硅太阳电池的研究 THE P+ NON-MASS-ANALYZER ION IMPLANTATION PROCEDURE FOR PRODUCTION OF POLYCRYSTALLNE SILICON SOLAR CELLS 潘显政 first-author 范湘军 徐在贵 郭怀喜 本文介绍了我们进行NMA（Non-Mass-Analyzer）离子注入研究的初步结果.文中详细地讨论了以固体红磷作工作物质的高频离子源所产生的P + 离子进行NMA离子注入的特性:注入层的均匀性,掺杂剂的纯度以及注入杂质在硅衬底中的分布。文中并报导了用P + 的NMA离子注入和CW CO 2 激光退火方法制备的多晶硅太阳电池,其光电转换效率达到7.2%。 This paper reports the Non-Mass-Analyzer ion implantation by aion implanter with a RF ion source using red phosphorus as a source. The procedure is described in detail and various characteristics of implanted layers, such as ion distribution, ion purity and dose uniformity in the substrate are investigated. The conversion efficiency of the polycrystalline solar cells using NMA ion implantation in association with CW CO 2 laser annealing approaches 7.2%. 教育部科学基金 1985-04-01 2021-04-01 4