离子注入硅激光和热退火缺陷比较

离子注入硅激光和热退火缺陷比较 COMPAR SON OF DEFECTS BETWEEN LASER AND THERMAL ANNEALING IN ION IMPLANTED SILICON 沈厚运 Shen Houyun first-author 本文用透射电子显微镜观察比较了同一注入剂量(5×10 14 —1×10 16 cm -2 ),分别经cw CO 2 激光和热退火,磷离子注入硅中缺陷。在1×10 16 cm -2 。激光退火样品中,观镜到高密度瓣状衬度的位错环;在热退火样品中观察到规则分布的位错网络。对注入剂量≤5×10 15 cm -2 的样品,激光退火能完全消除注入损伤,但经热退火仍有弧状衬度的位错环。最后,用弱束技术对瓣状位错环进行了衬度分析。 Defects in Phosphous ion-implanted silicon with the same doses(from 5×10 14 to 1×10 16 cm -2 ), annealed by cw CO 2 laser and isothermal respectively, were studied and compared by the observation using transmission electron microscopy（TEM）. Small dislocation loops with double-arc image contrast were observed in the specimen with doses 1×10 16 cm -2 and with cw CO 2 laser annealing. For the specimen with the same doses, annealing with isothermal, however, the dislocation networks with regular distribution characters were observed. Implantation damages in silicon with doses≤5×10 15 cm -2 could be eliminted by cw CO 2 laser annaeling. Some dislocation loops with arc-shape contrast existed in the isothermal annealed specimens with doses≤5×10 15 cm -2 . Image characteritic of small loops were analyzed TEM weak-beam technigue. 1986-04-01 2021-04-01 4