再论硅光伏探测器的响应度

再论硅光伏探测器的响应度 Further Study on Responsibility of Si Photovoltaic Detector 袁涛 YUAN Tao 1 2 first-author 陈炳若 CHEN Bing\|ruo 1 2 郑若成 ZHENG Ruo\|cheng 1 2 武汉大学物理科学与技术学院 武汉大学物理科学与技术学院 School of Physics and Technology,Wuhan University School of Physics and Technology,Wuhan University 武汉大学物理科学与技术学院,湖北,武汉,430072 武汉大学物理科学与技术学院,湖北,武汉,430072 实验中发现部分硅光伏探测器在以光生电压为输出信号时 ,开路电压 VOC存在异常现象 .在一定强度的光照下 VOC出现峰值 ,随后 VOC随入射光强的上升而下降 .本文对这种异常现象的规律进行了研究和分析 ,认为该现象的产生是由于在金属与半导体之间形成了整流接触 ,这也是导致器件响应度下降的重要原因 The open circuit voltage of silicon photovoltaic detector （UV\|110） was studied in this paper. An abnormal peak voltage was observed in some devices at definite illumination, then the open circuit voltage decreases with increasing light intensity. The results indicate that the rectification contact between metal and semiconductor is responsible for the abnormal phenomenon. It also strongly degrades the responsibility of these devices. 硅光伏探测器 开路电压 并联电阻 串联电阻 整流接触 silicon photovoltaic detector open circuit voltage parallel resistance series resistance rectification contact TN364 武汉市科技攻关项目资助 （ 2 0 2 12 0 92 9） 2002-01-01 2021-04-01 1