反应溅射型射频固体离子源

反应溅射型射频固体离子源 REACTION SPUTTERING TYPE RADIO-FREQUENCY ION SOURCE FOR SOLID ELEMENTS 程世昌 first-author 傅德君 张辉 本文介绍一种新型的高熔点固体元素离子源—反应溅射型射频离子源。源的结构是在通常的电感耦合射频离子源中引入一对平板状溅射电极, 电极由所要离化的高熔点固体元素或其化合物组成,使用该固体元素的气态氧化物或卤化物作为工作气体。离子源中活性气体离子通过反应溅射作用,与溅射电极中的固体元素化合成气态化合物进入离子源中,增加源中固体元素分子成分,从而获得较大的难熔元素离子束流。该源仍具有一般射频离子源的结构简单,工作寿命长以及性能稳定等特点。该源在最佳条件下靶上可得到80μA左右的碳离子流;获得的硼离子束流也比普通射频离子源要高。 A new type of ion source for solid state elements withhig her melting points, the reaction sputtering RF ion source, has been described in this paper. It is constructed by employing a pair of plate-shaped spnttering electrodes in a normal induetance coupling RF ion source The electrodes consists of solid state elements, needed for ionization, with higher melting points or their compounds and the gaseous oxide or halide of the solid state elements are used as working-gas. Owing to the fact that the gaseous compounds composed of reactive gas ions in the source and solid elements in the sputtering electrodes by means of reaction sputtering effect enter the ion source the component of the solid element mole cules is increased and a bigger ion beam current of refractory elements is obtained. This source possesses all advantages of general RF ion sottrce, i. e., singlified structure, long working life-time and stable About 80μA of carbon ion current on the target can be got under the opt imal condi tions. The boron ion beam cu rrent from this source is also bigger than that form the general RF ion source. 反应溅射 射频离子源 碳离子 硼离子 中国科学院科学研究基金 1987-04-01 2021-04-01 4