场效应管噪声特性的研究

场效应管噪声特性的研究 A STUDY OF NO1SE CHARACTERISTICS FOR FIELD-EFFECT TRANSISTORS 方志豪 Fang Zhihao first-author 本文介绍结型场效应管的噪声源及其表示方法,利用y导纳参数模型得出共源、共栅及共漏场效应管低、中、高频段噪声特性的实用计算公式,并对三种配置场效应管的噪声特性进行了比较,提出了低噪设计的一些原则。 This paper gives the noise sources of Junction-Gate Field-Effect Transistors and their representation methods. Using y-admittance parameters, the useful for mulae of noise performance for Common-Source, Common-Gate and Common-Drain Junction-Gate FET at low, intermediate and high frequencies are obtained. A comparison of the noise characteristics of J-FET for three arrangements has been made, some principles for low-noise design are presented. 1980-03-01 2021-04-01 3