p-n结光谱响应分析

p-n结光谱响应分析 AN ANALYSIS OF THE SPECTRUM RESPONSE FOR THE P-N JUNCTION 尹长松 Yin Changsong first-author 本文考虑到影响p-n结型硅光电器件光谱响应的诸因素,通过光谱响应最佳结深x im 这一参数将诸因素联系起来,得到x im 的理论表示式,并给出了数字计算结果。文中所作实验样品的理论计算值与实际测量值较好地一致。 This paper considers the factors effecting the spectrum response of the optoelectronic devices of the p-n junction type, the factors are connceted by the optimal junction depth x jm for the spectrum response. We get a theoretical equation of x jm and the result of the numerical calculations for it. The measured result is consistent with the theoretical result for the samples in this paper. 1981-04-01 2021-04-01 4