MOSFET表面态噪声研究

MOSFET表面态噪声研究 STUDY OF SURFACE STATE NOISE IN MOSFET’S 方志豪 Fang Zhihao Zhu Qiuping 1 first-author 朱秋萍 1 武汉大学无线电信息工程系 武汉大学无线电信息工程系 Department of Radio Information Engineering, Wuhan University Department of Radio Information Engineering, Wuhan University 本文在导出MOSFET全工作域表面态噪声谱密度通用表示式的基础上,进一步推得MOSFET 1/f噪声谱密度的实用公式,适用于强、弱反型从线性区直到饱和区的各种工作状态。理论很好地符合噪声谱频率因子实验、偏置电压实验及器件尺寸实验。研究表明,本文提出的理论公式具有实际应用的价值,可望作为描述表面态噪声特性的基础公式。 The spectrum model of surface state noise of MOSFET’s, operating in weak and strong inversion from the linear to the saturation region, is developped. From the model, a simple analytical 1/f noise expression is obtained. The given expression is used to analyse the frequency dependance of the noise spectrum, and the influence of bias and geometry on the noise. The theory agrees well the experimental results. It is shown that the new expressions have the advantage of good practicability. 表面态噪声 1/f噪声 噪声谱频率因子 surface state noise 1/f noise noise spectrum frequency dependance 国家自然科学基金(61672102) 1989-02-01 2021-04-01 2