射频溅射法制备掺铂TiO₂薄膜的基本性质

射频溅射法制备掺铂TiO 2 薄膜的基本性质 Basic Properties of Pt-Doped TiO 2 RF Sputtered Thin Films 何永华 HE Yong-hua 1 2 first-author 于国萍 YU Guo-ping 1 2 魏正和 WEI Zheng-he 1 2 曾志锋 Zeng Zhi-feng 1 2 武汉大学物理科学与技术学院 武汉大学物理科学与技术学院 School of Physics and Technology, Wuhan University School of Physics and Technology, Wuhan University 武汉大学物理科学与技术学院,湖北,武汉,430072 武汉大学物理科学与技术学院,湖北,武汉,430072 用射频反应溅射法制备了掺铂的TiO2薄膜.用X射线衍射仪（XRD）,紫外 可见（UV vis）光谱仪,电子扫描显微电镜（SEM）和X光电子能谱分析仪（XPS）对薄膜的基本性质进行了表征.研究结果表明:掺铂可以显著促进锐钛矿相的生长;TiO2薄膜在紫外的吸收边发生红移,其光谱响应范围得到了提高;铂氧化物的分解,促使薄膜表面出现了分散分布的微米尺寸岛状突出物,同时导致单质铂在薄膜表面发生富集. Pt-doped TiO 2 thin films were prepared by RF reactive sputtering.The doped TiO 2 films were characterized by XRD,UV-vis, SEM and XPS. The results showed that: Pt could accelerate the formation of anatase; the absorption band Red-Shift occurred,which improved the absorption spectrum range of the films; something like island formed at the surface of the films because of the decomposition of Pt Oxide, and Pt concentrated on the surface of the films. 二氧化钛 铂 表面形貌 富积 TiO2 Pt surface morphology concentration O484.4 国家自然科学基金资助项目（59871033） 2004-01-01 2021-04-01 1