MOS器件1/f噪声的热激发模型

MOS器件1/f噪声的热激发模型 THE THERMAL ACTIVATION MODEL OF 1/f NOISE IN MOSFET’s 方志豪 Fang Zhihao 1 2 3 first-author 朱秋萍 Zhu Qiuping 1 2 3 武汉大学空间物理与电子信息学系 武汉大学空间物理与电子信息学系 Department of Space Physics and Electronics Information, Wuhan University Department of Space Physics and Electronics Information, Wuhan University 武汉大学空间物理与电子信息学系,武汉 武汉大学空间物理与电子信息学系,武汉 ,430072 ,430072 本文推广应用随机开关理论,建立了MOS器件1/f噪声的双态系统理论,提出了确定载流子俘获与释放过程时间常数的方法,在此基础上推导出MOS器件热激发模型的1/f噪声表达式,给出了迄今比较完整的温度因子和偏置因子表示式。本理论能够解释迄今发表的低温下MOS器件1/f噪声的许多实验结果,由此表明,热激发模型有可能更接近1/f噪声的物理本质。 The theory of two-state systems for carriera generation-recombination in MOSFETs is proposed in this paper. The complete analytical expressions of 1/f noise in MOSFETs is derived on the basis of this theory for the thermal activation model. Comparisions of the theory with experiments show that the thermal activation model, which can explain more experimental results, may be preciser than the pure tunneling model for describing 1/f noise in MOSFET’s. 1/f噪声 热激发模型 低温器件 1/f noise the thermal activation model low temperature devices TN301.1;TN432 1993-03-01 2021-04-01 3