掺杂钴对锆钛酸铅铁电薄膜电性能的影响

掺杂钴对锆钛酸铅铁电薄膜电性能的影响 The Electrical Properties of Cobalt-Modified Lead Zirconate Titanate Ferroelectric Thin Films 王国强 WANG Guo-qiang~ 1 2 first-author 刘红日 1 2 华中科技大学物理学系,华中科技大学物理学系,湖北,武汉,430074 华中科技大学物理学系,华中科技大学物理学系,湖北,武汉,430074 1,2), LIU Hong-ri~1 1,2), LIU Hong-ri~1 郧阳师范高等专科学校物理学系,湖北丹江口442700,湖北,武汉,430074 郧阳师范高等专科学校物理学系,湖北丹江口442700,湖北,武汉,430074 采用溶胶-凝胶法在LaNiO3/Si衬底上制备了Pb（Zrx,Ti1-x）O3（PZT）与PbCoy（Zrx,Ti1-x）O3（PC-ZT）铁电薄膜,实验发现钴掺杂对PZT的铁电性能产生了很大的影响.不掺杂的PZT铁电薄膜剩余极化强度Pr=14.05μC/cm2,矫顽场Ec=26.35kV/cm,而钴的掺杂有效地提高了PZT薄膜的剩余极化强度,当掺杂钴达到12%时,Pr=36.26μC/cm2,矫顽场减小.同时,掺杂钴增强了PZT薄膜的介电性能并且减少了漏电流. By Sol-Gel method, ferroelectric thin films PZT and PCZT are made on the LaNiO 3 /Si substrates. The result shows that the doping of cobalt has a significant influence on ferroelectric properties of PZT films. For the PZT ferroelectric thin films without cobalt-doping, the remnant polarization P r is （14.05） μC/cm 2 ,and the coercive field E c is 26.35 kV/cm, whereas the value of remnant polarization of PZT with cobalt-doping is considerably increased. When the amount of cobalt is up to 12mol%, P r is 36.26 μC/cm 2 , and the coercive field is decreased. In addition, cobalt-doping has respective effects on the dielectric properties and leakage current properties of PZT films. 铁电薄膜 锆钛酸铅 电性能 溶胶-凝胶法 ferroelectric thin films cobalt-doped lead zirconate titanate electric properties Sol-Gel[HJ] TB43 国家高技术研究发展计划（2003BA310A28）;湖北省教育厅科学技术研究项目（D200560005） 2005-03-01 2021-04-01 3