金属与金属氧化物复合靶制备Bi₄Ti₃O₁₂薄膜

金属与金属氧化物复合靶制备Bi 4 Ti 3 O 12 薄膜 PREPARATION OF Bi 4 Ti 3 O 12 FILMS BY RF SPUTTERING OF METAL AND METAL OXIDE COMPOSE TARGET 周正国 1 first-author 卢志红 1 章煜 1 武汉大学物理学系 武汉大学物理学系 Department of Physics,Wuhan University Department of Physics,Wuhan University 报道了金属与金属氧化物复合靶的射频溅射法，制备Ｂｉ４Ｔｉ３Ｏ（１２）（ＢＴＯ）铁电陶瓷薄膜的方法，研究ＢＴＯ薄膜的晶体结构，表面形貌以及断面．实验表明采用复合靶能够制备质量好、成分均匀的ＢＴＯ薄膜，其结晶取向与基片材料有关，且退火工艺对膜的质量有影响． Ferroelectric Bi4Ti3O12, thin films have been successfully obtained on the Si（111） substrates and the Pt （100）//Si （111）subctrates by RF sputtering using metal and metal oxide compose target.The films with peroskite structure have been grown at annealing temperature of 710℃.The orientation was found to connect with substrates.The quality of the films depended on the condition of annealing. Bi4Ti3O12铁电薄膜 复合靶 结晶取向 BTO ferroelectric film compose target crystallographic orientation O484 国家自然科学基金(61672102) 1995-03-01 2021-04-01 3