γ辐照对硅光电二极管光电流的影响

γ辐照对硅光电二极管光电流的影响 EFFECT OF γ-ray IRRADIATION ON THE PHOTOCURRENT OF Si PHOTODIODE 陈炳若 1 first-author 李世清 1 黄启俊 1 尹德强 1 武汉大学物理学系 武汉大学物理学系 Department of Physics, Wuhan University Department of Physics, Wuhan University 研究了ＰＩＮ光电二极管和普通光电二极管６０ＣＯγ辐照后的积分光电流、紫外光电流、光谱光电流的变化规律以及光谱光电流与器件反偏电压之间的关系，并对结果进行了定性分析．实验用辐照剂量分别为２×１０３ＧＹ（Ｓｉ）和２×１０４ＧＹ（Ｓｉ）． in this paper the degradations of characteristics of PIN photodiode and the conventional photodiode, including the integrating photocurrent.UV-photocurrent and spec tral current, are reported with irradiation of 60Co γ- ray.The relationship between the spectral current of device and reverse bias is also discussed.The qualitative analysis on results is presented. The irradiation dose is 2×103 GY（Si）and 2 × 104 GY（Si）,respectively. 光电二极管 光电流 γ辐照 photodiode photocurrent γ-ray irradiation TN312.4 国家教委自然科学基金 1995-03-01 2021-04-01 3