ETV－ICP－AES中硼、钼、铬和硅的蒸发机理研究

ETV－ICP－AES中硼、钼、铬和硅的蒸发机理研究 THE STUDY ON VAPORIZATION OF BORON, CHROMIUM,MOLYBDENUM AND SILICON FROM GRAPHITE FURNACE ETV-ICPAES 胡斌 1 first-author 江祖成 1 曾云鹗 1 武汉大学化学系 武汉大学化学系 Department of Chemistry,Wuhan University Department of Chemistry,Wuhan University 研究了难熔元素硼、铬、钼和硅在石墨炉电热蒸发进样──ＩＣＰ－ＡＥＳ中的蒸发行为，探讨了以聚四氟乙烯为氟化剂改善难熔元素蒸发的方法．系统地考察了影响难熔元素氟化蒸发的因素，提出了难熔元素的蒸发机理． In this paper,the vaporization behaviors of refractory elements （Boron,Chromium,Molybdenum and Silicon）in graphite furnace ETV-ICP-AES have been investigated,and a polytetrafluoroethylene slurry was used as chemical modifier to improve the vaporization of the refractory elements. The factors which influenced the fluorination vaporization process were systematically explored, and a proper vaporization mechanism was proposed. 难熔元素 电热蒸发 等离子体光谱 聚四氟乙烯 蒸发机理 refractory elements polytetrafluoroethylene electrothermal vaporization plasma spectrometry vaporization mechanism. O657.31 国家自然科学基金,国家教委博士点基金 1995-02-01 2021-04-01 2