γ辐照InP的正电子湮没研究

γ辐照InP的正电子湮没研究 DEFECT PROPERTIES IN γ IRRADIATED InP STUDIED BY POSITRON ANNIHILATION 马莉 Ma Li 1 2 3 first-author 李世清 Li Shiqing 1 2 3 陈志权 Chen Zhiquan 1 2 3 胡新文 Hu Xingwen 1 2 3 鄢和平 and Yan Heping 1 2 3 武汉大学物理学系 武汉大学物理学系 Department of Physics, Wuhan University,. Department of Physics, Wuhan University,. 武汉大学物理学系,武汉 武汉大学物理学系,武汉 ,430072 ,430072 用 60 Co γ辐照对3种导电类型（P、N、SI）和不同掺杂浓度的InP晶体进行辐照,辐照剂量分别为10 3 GY,10 4 GY,10 5 GY。在室温下测量了样品辐照前后的正电子寿命,发现随着辐照剂量的增加,正电子平均寿命基本不变或呈减小趋势,一方面是由于γ辐照使晶体内原子发生电离,导致晶体内空位型缺陷的电荷态发生变化,缺陷的负电性增加。另一方面γ辐照在晶体内产生缺陷,但大多数缺陷在正电子寿命测量前已在室温下退火,表明InP晶体具有较强的抗辐照能力。 Three kinds of InP samples （N , P and SI type） with different carrier concentration were irradiated with γ rays, the doses we used were 0-105Gy. The positron lifetime spectra were measured before and after irradiation. With the increase of the doses, the positron average lifetime τav has small decreases or basically have no changes. The γ irradiation made defects’ charge state changed or induced some new defects, but most of them have been annealed in room temperature. That means InP has a high radiation resistance. γ辐照 正电子寿命 缺陷 电荷态 γ irradiation positron lifetime defect charge state O734 国家教委自然科学基金 1996-01-01 2021-04-01 1