Heavily Te-doped as-grown GaSb

electron-irradiated GaSb and proton-irradiated GaSb samples were studied by positron lifetime spectroscopy（PAS）.The room temperature lifetime measurement indicated there were VGa-related defects with a characteristic lifetime of 298 ps in the heavily Te-doped as-grown GaSb sample.After electron irradiation

this type of defect changed and the average lifetime decreased.It should be due to V3-Ga changing to V2-Ga.Proton irradiation could introduce defects with a high lifetime

and they should be double-vancany defects they may be double-vancany defects.In the temperature dependence measurements which were carried out over the temperature range of 10-300 K

positron shallow trap was observed in all of the three samples

and it should be attributed to positrons forming hydrogenlike Rydberg states with GaSb antisite defects.