InAs/AlAs/GaAs量子点的光致发光光谱研究

InAs/AlAs/GaAs量子点的光致发光光谱研究 Photoluminescence Spectra Study of InAs/AlAs/GaAs Quantum Dots 孟宪权 MENG Xianquan 1 2 first-author 程定军 CHENG Dingjun 1 2 胡明 HU Ming 1 2 张霞 ZHANG Xia 1 2 武汉大学物理科学与技术学院 武汉大学物理科学与技术学院 School of Physics and Technology,Wuhan University School of Physics and Technology,Wuhan University 武汉大学物理科学与技术学院,湖北,武汉,430072 武汉大学物理科学与技术学院,湖北,武汉,430072 采用分子束外延技术生长InAs/AlAs/GaAs量子点,用透射电镜观察量子点的截面形貌,用光致发光光谱仪测试量子点的发光光谱.透射电子显微镜及光致发光光谱结果表明,量子点底部观察不到InAs浸润层,室温下样品的光致发光峰值波长达1.49μm,为研制光纤通讯中的半导体量子点激光器提供了实验依据. InAs/AlAs/GaAs quantum dots are grown by molecular beam epitaxy（MBE） method.The sectional image of the quantum dots is observed by TEM and the optical properties are characterized by photoluminescence spectra.The dark line due to the InAs wetting layer disappears and the PL peak is redshifted to 1.49 μm compared to PL emission from traditional InAs/GaAs quantum dots at room temperature.This is significant for developing laser devices of semiconductor quantum dots in optical fiber communication. 量子点 光致发光 透射电子显微镜 浸润层 quantum dots photoluminescence transmission electron microscopy wetting layer O484.41;O413 国家自然科学基金资助项目（60676036和10775106） 2008-03-01 2021-04-01 3