C₆₀薄膜的离化团簇束沉积及离子掺杂

C 60 薄膜的离化团簇束沉积及离子掺杂 IONIZED CLUSTER BEAM DEPOSITED C 60 FILMS AND THEIR DOPING 傅德君 Fu Dejun 1 first-author 雷园园 Lei Yuanyuan 1 李金钗 Li Jinchai 1 叶明生 Ye Mingsheng 1 彭友贵 Peng Yougui 1 范湘军 Fan Xiangjun 1 武汉大学物理学系 武汉大学物理学系 Department of Physics, Wuhan University Department of Physics, Wuhan University 用离化团簇束（ＩＣＢ）沉积法在石英玻璃和云母衬底上形成了Ｃ６０薄膜，ＸＲＤ测试表明膜呈多晶结构，原位电阻测试表明膜的室温电阻率超过１０４Ωｃｍ，具有负的电阻温度系数．用８０ｋｅＶＰ＋，ＢＢｒ３＋，Ａｒ＋和Ｈｅ＋对Ｃ６０膜作剂量范围为０～１０１６ｃｍ－２的离子注入，Ｃ６０膜的电阻率随注入剂量增加而急剧下降，磷注入具有ｎ型掺杂作用，离子与Ｃ６０分子的相互作用导致Ｃ６０分子分裂，引起薄膜表面非晶化． We report polycrystalline semiconducting C 60 films prepared by ionized cluster beam deposition and ion implantation of the films using dopants as well as inert elements. The films showed room temperature resistivity over 10 4 Ω·cm and sharp decreases of the resistance upon ion implantation. Amorphization was observed for all implanted films, which was attributed to the disintegration of the C 60 molecules as a result of the ion C 60 interaction. We observed n type electrical conduction for phosphorus implanted C 60 films. 离化团簇束沉积 C60 离子注入 原位测试 ionized cluster beam deposition C 60 ion implantation in situ measurement O484 国家自然科学基金(61672102) 1998-03-01 2021-04-01 3