低温衬底的射频反应溅射法制备a-SiO₂薄膜的研究

低温衬底的射频反应溅射法制备a-SiO 2 薄膜的研究 Study of Preparing a-SiO 2 Films Using the Radio\|Frequency Reactive Sputtering With the Substrate at Low Temperature 张祖新 ZHANG Zu\|xin 1 1 2 3 first-author 李伟 LI Wei 2 1 2 3 张文炳 ZHANG Wen\|bing 1 1 2 3 武汉大学物理学系,武汉,430072 武汉大学物理学系,武汉,430072 Department of Physics,Wuhan University Department of Physics,Wuhan University 山东大学物理学系,济南,250100 山东大学物理学系,济南,250100 2 Department of Physics,Shandong University 2 Department of Physics,Shandong University 武汉大学物理学系!武汉430072山东大学物理学系,济南,250100 武汉大学物理学系!武汉430072山东大学物理学系,济南,250100 低温衬底使器件在制膜过程中避免热伤害． 研究得到强水冷衬底的射频反应溅射法制备ａ－ＳｉＯ２ 薄膜的最佳工艺条件． 所制得的薄膜具有好的致密度和抗腐蚀性． The optimal preparing technologies were obtained for preparing a\|SiO 2 films using the radiofrequency reactive sputtering with the substrate cooled by water.The compaction and anticorrsion are fine for prepared a\|SiO 2 films.The advantage of preparing films at low temperature is avoiding heat damage for devices in prepqring process.\; 非晶 二氧化硅 薄膜 射频反应溅射 amorphous SiO 2 film RF reactive sputtering TN304.055 国家自然科学基金(61672102);教育部重点科学技术项目基金 1999-05-01 2021-04-01 5