射频溅射法制备Pb_1-xCo_xSe薄膜及物性研究

射频溅射法制备Pb 1-x Co x Se薄膜及物性研究 Preparation of Pb 1- x Co x Se Films by RF Sputtering and Investigation of the Material Characters 黄良安 HUANG Liang\|an 1 first-author 周正国 ZHOU Zheng\|guo 1 武汉大学物理学系,武汉,430072 武汉大学物理学系,武汉,430072 Department of Physics,Wuhan University Department of Physics,Wuhan University 利用复合靶共溅射法制备了半磁性半导体 Ｐｂ１－ ｘ Ｃｏｘ Ｓｅ 薄膜．研究了薄膜的成分结构以及电阻率温度特性和磁化率温度特性间的关系．结果表明：由于 Ｃｏ 离子介入， Ｐｂ１－ ｘ Ｃｏｘ Ｓｅ 发生了由金属特性向半导体特性的转变，在充分低的温度下，并伴有磁相转变．磁相转变温度与磁性离子浓度相关，磁化率的相对变化幅度与磁性离子浓度有关 The semi\|magnetization and semiconductor Pb 1- x Co x Se films have been obtained by RF sputtering with compound target. The component structure,and the relationship of the character of the electric resistivity\|temperature and that of magnetic susceptibility\|temperature of the films have been studied. The results show: due to the interpolation of the Co ion, Pb 1- x Co x Se have the metal\|semiconductor transition; and at low enough temperature,the transition is accompanied by magnetic phase transition. The temperature of the magnetic phase transition is related to the concentration of the magnetic ion, and the changing scope of the magnetic susceptibility is related to the concentration of the magnetic ion too. 半磁性半导体 复合靶 电阻率 磁化率 O484.4 国家自然科学基金(61672102) 1999-03-01 2021-04-01 3