非晶GeO₂-SiO₂复合薄膜的制备及其红外吸收谱

非晶GeO 2 -SiO 2 复合薄膜的制备及其红外吸收谱 Preparatio and Infrared Spectra of GeO 2 -SiO 2 Thin Amorphous Films 张祖新 1 2 first-author 李伟 1 2 张文炳 1 2 武汉大学物理学系,武汉,430072 武汉大学物理学系,武汉,430072 Department of Physics,Wuhan University Department of Physics,Wuhan University 山东师范大学物理学系,济南,250014 山东师范大学物理学系,济南,250014 Department of Physics,Shandong Normal University Department of Physics,Shandong Normal University 采用锗－硅复合靶射频反应溅射技术，制备了ＧｅＯ ２ 含量ｘ＝０％～８１％的非晶ＧｅＯ ２ －ＳｉＯ ２ 复合薄膜．用自动椭偏仪进行测量，得到复合氧化物薄膜中ＧｅＯ ２ 的含量．用傅里叶变换红外光谱仪测得此种薄膜的红外吸收谱随ＧｅＯ ２ 含量的变化关系，并讨论了其结构特征． The GeO 2 -SiO 2 thin amorphous films with the GeO 2 content x= 0%- 81 % have been prepared by the radio-frequency reactive sputtering with the Ge-Si composite target. The GeO 2 content of these thin films has been obtained using the automatic ellipsometer. The dependence of the infrared spectra on the GeO 2 content was found by means of the Fourier transform infra-red spectrograph. The structure characterisitics of the composite films was disscussed. 非晶 二氧化锗 二氧化硅 复合膜 红外谱 amorphous GeO2 SiO2 composite film infrared spectrum 10.14188/j.1671-8836.2000.01.022 O484 国家自然科学基金!（19834070）;教育部重点科学技术项目 2000-01-01 2021-04-01 1