未掺杂SI-InP中缺陷的正电子寿命研究

未掺杂SI-InP中缺陷的正电子寿命研究 Positron Lifetime Study of Defects in Undoped SI-InP 毛卫东 MAO Wei- dong1 1 2 first-author 王少阶 WANG Shao- jie1 1 2 王柱 WANG Zhu1 1 2 孙聂枫 SUN Nie- feng2 1 2 孙同年 SUN Tong- nian2 1 2 赵有文 ZHAO You- wen2 1 2 武汉大学物理学系,湖北,武汉,430072 武汉大学物理学系,湖北,武汉,430072 Department of Physics,Wuhan University,Wuhan 0 72 Department of Physics,Wuhan University,Wuhan 0 72 河北半导体研究所,河北,石家庄,050051 河北半导体研究所,河北,石家庄,050051 2 .Hebei Semiconductor Research Institute,Shijiazhuang0 5 0 0 5 1 2 .Hebei Semiconductor Research Institute,Shijiazhuang0 5 0 0 5 1 在 10～ 30 0 K的温度范围内 ,测量了用液封直拉法 （L EC）生长的 n- In P经高温退火后形成的未掺杂SI- In P晶体的正电子寿命谱 .用 PATFIT和 MEL T两种技术分析了正电子寿命谱 .常温下的结果表明 ,SI- In P中存在铟空位 VIn或与杂质的复合体缺陷 .观察到在 10～ 2 2 0 K之间正电子的平均寿命 τm 随温度的升高而减小 ,表明上述缺陷是带负电荷的铟空位 VIn的氢复合体 ;但是在低温下还存在正电子浅捕获态 ,浅捕获中心很可能是反位缺陷 In2 - P ,因此在 2 2 0～ 30 0 K范围内平均寿命τm 随温度的升高而略有上升 . Positron lifetime measurement,carried outover the temperature range of1 0～ 30 0 K,have been used to investigate defects in undoped semi- insulating In P crystals,which was obtained from liquid encapsulated Czochralski- grown In P under high- temperature annealing.The positron lifetime spectrum is analyzed by both PATFIT and MELT technologies.The results in the room temperature show that there exist indium vacancies VIn and the complexes with the hydrogen impurities.The positron average lifetime τm is found to be dependenton temperature,decreasing with the temperature over the range of 1 0～ 2 2 0 K, which is due to the negative hydrogen complexes defects of VIn.However,τm goes up slightly over 2 2 0 K, which is on account of the exist of the positron shallow trapping at lower temperature.The negatively charged acceptor In2 -p antisite should be responsible for the shallow traps. 未掺杂SI-InP 正电子寿命 空位-杂质复合体 undoped SI- In P positron lifetime vacancy- impurity complexes 10.14188/j.1671-8836.2000.05.017 O474 国家自然科学基金资助项目!（ 695 760 2 0 ） 2000-05-01 2021-04-01 5