Al膜平整度对硅基AAO有序度的影响

Al膜平整度对硅基AAO有序度的影响 Effect of Flatness of Al Film on Fabrication of AAO Template on Silicon Substrate 李芹 LI Qin 1 first-author 张海明 ZHANG Haiming 1 胡国锋 HU Guofeng 1 高波 GAO Bo 1 朱彦君 ZHU Yanjun 1 李菁 LI Jing 1 天津工业大学理学院 天津工业大学理学院 School of Science,Tianjin Polytechnic University School of Science,Tianjin Polytechnic University 利用真空电子束蒸发技术,通过改变Al的蒸发速率在P型〈1 0 0〉晶向的单晶硅片上制备了两种不同平整度的Al膜,在草酸中对它们分别进行一次阳极氧化,研究Al膜平整度对硅基AAO（多孔硅基氧化铝）有序度的影响.结果表明,硅基AAO的有序度对Al膜的平整度有很大的依赖性,硅基Al膜的平整度越高,所获得的硅基AAO的有序度就越好.另外,对平整度较差的Al膜进行二次阳极氧化可以显著地改善硅基AAO的有序度. Using vacuum electron beam evaporation technology,two kinds of different smoothness of Al films had been prepared through changing the rate of evaporation Al on P-type 〈1 0 0〉 Si substrate.The Al films were treated with a one-step anodization process in oxalic acid,and then research findings showed that anodic oxidation film flatness had an effect on Al silicon-based AAO（anodic aluminum oxide） order degrees.The results showed that the flatness of Al film largely determined the order of silicon-based AAO.The higher the smoothness of silicon-based Al films is,the better the silicon-based AAO degree of order is obtained.In addition,the results display that the order degree of the silicon-based AAO has been significantly improved by using two-step anodization. 硅基AAO（多孔硅基氧化铝） 平整度 二次阳极氧化 有序度 anodic aluminum oxide（AAO） on silicon substrate flatness two-step anodization degree of order 10.14188/j.1671-8836.2011.01.013 TB43 天津市自然科学基金（09JCYBJC04400）资助项目 2011-01-01 2021-04-01 1 57