基于γ₅₁的电光调制器的可行性研究

基于γ 51 的电光调制器的可行性研究 Feasibility Study of the γ 51 -Based Electro-Optic Modulator 周幼华 ZHOU Youhua1 1 2 first-author 顾豪爽 GU Haoshuang1 1 湖北大学功能材料绿色制备与应用省部共建教育部重点实验室 湖北大学功能材料绿色制备与应用省部共建教育部重点实验室 Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University 江汉大学物理与信息工程学院 江汉大学物理与信息工程学院 School of Physics and Information Engineering,Jianghan University School of Physics and Information Engineering,Jianghan University 通过对不同晶系线性电光系数矩阵的分析计算,研究了利用晶体电光系数γ51实现电光调制的可能性.结果分析表明,在电场中的γ51引起折射率的变化与x方向电场强度E12成正比;利用KTa0.35Nb0.65O3晶体的巨大γ51参数引起的二次电光效应,可以获得较低的半波电压;在立方-四方相变点附近的KTa1-xNbxO3晶体有极大克尔系数的现象,同时γ51参数电光效应也得到了解释. The feasibility of electro-optic modulation based on electro-optical coefficient γ51 was investigated,by calculating linear electro-optical coefficient matrix consisting of γ51.The variety of the relative index induced by the field was proportional to E21.It could give an explanation of giant Kerr coefficient around the cubic-tetragonal phase transition of KTa1-xNbxO3.And a design proposal of electro-optic modulation utilizing γ51 of KTa0.35Nb0.65O3 was introduced. 电光调制器 晶体电光系数γ51 电光晶体 钽铌酸钾 the electro-optic modulator electro-optical coefficient γ51 electro-optic crystal KTa1-xNbxO3 10.14188/j.1671-8836.2011.01.018 TN761 国家自然科学基金重大资助项目（90923013）;湖北省教育厅重点项目资助（2009-176） 2011-01-01 2021-04-01 1 57