低能团簇负离子束研究

低能团簇负离子束研究 Study of Negative Cluster Ion Implantation Technology 张瑞 ZHANG Rui 1 first-author 张早娣 ZHANG Zaodi 1 王泽松 WANG Zesong 1 王世旭 WANG Shixu 1 付德君 FU Dejun 1 武汉大学物理科学与技术学院 武汉大学物理科学与技术学院 School of Physics and Technology,Wuhan University School of Physics and Technology,Wuhan University 本文采用在武汉大学1.7MV串列加速器上的铯溅射负离子源（SNICS）产生碳团簇离子束,然后将离子注入到镍膜中,在样品表面成功制备了少数层石墨烯,用拉曼光谱进行了表征. We have generated the carbon cluster ions using the source of negative ions by cesium sputtering（SNICS）at 1.7MV double accelerator in Wuhan University.We obtained successfully few-layer graphene on the Ni films followed by implanting into the Ni films by carbon cluster ions.The structure of the samples was characterized by Raman spectroscopy. 加速器 离子注入 碳团簇 负离子 石墨烯 accelerator ion implantation carbon cluster negative ions graphene 10.14188/j.1671-8836.2014.01.010 TL503.3 国家自然科学基金项目（11105100）;教育部中央院校自主科研基金项目资助 2014-01-01 2021-04-01 1 60