Nd_0.05Bi_0.95FeO₃极化诱导La_0.7Sr_0.3MnO₃/Nb:SrTiO₃异质结薄膜电阻变换效应

Nd 0.05 Bi 0.95 FeO 3 极化诱导La 0.7 Sr 0.3 MnO 3 /Nb:SrTiO 3 异质结薄膜电阻变换效应 Nd 0.05 Bi 0.95 FeO 3 Polarization Induced Resistive Switching in La 0.7 Sr 0.3 MnO 3 / Nb:SrTiO 3 Heterostructure Film 朱永丹 ZHU Yongdan 1 2 first-author 裴玲 PEI Ling 3 李美亚 LI Meiya 2 湖北民族学院科技学院 湖北民族学院科技学院 Science and Technology College,Hubei University for Nationalities Science and Technology College,Hubei University for Nationalities 武汉大学物理科学与技术学院 武汉大学物理科学与技术学院 School of Physics and Technology,Wuhan University School of Physics and Technology,Wuhan University 湖北工业大学理学院 湖北工业大学理学院 School of Science,Hubei University of Technology School of Science,Hubei University of Technology 采用脉冲激光沉积等方法在Nb:Sr Ti O3衬底上分别制备了Nd0.05Bi0.95Fe O3,La0.7Sr0.3Mn O3,[Nd0.05Bi0.95Fe O3/La0.7Sr0.3Mn O3]异质结薄膜,并研究了异质结薄膜的电阻变换效应.研究显示:[Nd0.05Bi0.95Fe O3/La0.7Sr0.3Mn O3]双层结构的异质结薄膜电阻变换性能优于单层Nd0.05Bi0.95Fe O3,La0.7Sr0.3Mn O3异质结薄膜,电阻变换比值超过100,电阻状态连续可调,电阻翻转电压仅需要2 V左右,且具有较好的阻态保持性.研究揭示出[Nd0.05Bi0.95Fe O3]铁电场效应诱导La0.7Sr0.3Mn O3/Nb:Sr Ti O3的界面耗尽层宽度的变化为电阻变换增强的原因. The Nd0. 05Bi0. 95 Fe O3,La0. 7Sr0. 3Mn O3,Nd0. 05Bi0. 95 Fe O3/ La0. 7Sr0. 3Mn O3 heterostructure films were deposited on Nb: Sr Ti O3 substrates by the pulsed laser deposition method. It is shown that the resistive switching performance of Nd0. 05Bi0. 95 Fe O3/ La0. 7Sr0. 3Mn O3 bilayer structure is better than that of Nd0. 05Bi0. 95 Fe O3,or [La0. 7Sr0. 3Mn O3]. This device exhibits resistive switching ratio of 100 and the stable resistance states can be continuously modulated with 2V reversal voltage. The mechanism of resistive switching is attributed to the Nd0. 05Bi0. 95 Fe O3ferroelectric field effect which changes the thickness of barrier at the La0. 7Sr0. 3Mn O3/ Nb: Sr Ti O3 interface. 电阻变换 极化诱导 铁电场效应 resistive switching polarization induced ferroelectric field effect 10.14188/j.1671-8836.2015.02.011 O484.1 国家自然科学基金（51372174,11364018）;湖北省自然科学基金（2012FFB00610,2014CFB610）;湖北省优秀中青年科技创新团队（T201429）资助项目 2015-02-01 2021-03-31 2 61