杂质的正电子亲和能对慢正电子束研究缺陷深度分布的影响

杂质的正电子亲和能对慢正电子束研究缺陷深度分布的影响 Positron Affinity of Impurities Effect on the Defects Distribution of Slow Positron Beam Measurement 台鹏飞 TAI Pengfei 1 first-author 李辉 LI Hui 2 河裾厚男 ATSUO Kawasuso 2 王柱 WANG Zhu 1 李兰婷 LI Lanting 3 黄远 HUANG Yuan 3 武汉大学物理科学与技术学院 武汉大学物理科学与技术学院 School of Physics and Technology,Wuhan University School of Physics and Technology,Wuhan University 日本原子力研究所 日本原子力研究所 Japan Atomic Energy Agency Japan Atomic Energy Agency 天津大学材料科学与工程学院 天津大学材料科学与工程学院 School of Materials Science and Engineering,Tianjin University School of Materials Science and Engineering,Tianjin University 为了研究杂质的正电子亲和能对正电子技术测量空位型缺陷深度分布的影响,本文利用慢正电子技术研究了不同离子注入Mo样品中产生的缺陷及缺陷的深度分布,所得到的实验结果与SRIM计算模拟结果相比较,慢正电子测量空位型缺陷深度分布范围总是大于SRIM模拟的缺陷分布.慢正电子束测量Cu离子注入的S参数最大值的深度（150 nm）要大于Mo离子注入的深度（125 nm）.结果表明,正电子亲和能高的Cu杂质团簇比Mo空位团更容易捕获正电子,且Cu团簇对正电子的捕获会影响到慢正电子束测量表面缺陷深度的结果. In order to investigate the influence of impurities with high positron affinity on the defects depth distribution of positron annihilation measurement,Samples of Mo which implanted with different metal ions were probed by slow positron beam. The results show that defects profiles obtained by positron measurements were deeper than those by SRIM simulation,which demonstrate the defects are easy to spread. The maximum S value depth of Cu+implantation（ 150 nm） is greater than that of Mo+implantation（ 125 nm）,which is caused by the positrons are easier trapped by Cu impurities clusters than Mo vacancy clusters. The Cu clusters positron trapping will effect the measurement of defects depth distribution by slow positron beam. 慢正电子束 正电子亲和能 离子注入 辐照损伤 slow positron beam positron affinity implantation irradiation damage 10.14188/j.1671-8836.2015.05.003 O572.322 国家自然科学基金资助项目（11275142） 2015-05-01 2021-03-31 5 61